CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：104

作者：

BELLON, P ^{[1
]}

CHEVALIER, JP ^{[1
]}

MARTIN, GP ^{[1
]}

DUPONTNIVET, E ^{[1
]}

THIEBAUT, C ^{[1
]}

ANDRE, JP ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94451 LIMEIL BREVANNES,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.99419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：567 / 569

页数：3

共 18 条

[1] GAINP-ALGAINP-GAAS HETEROSTRUCTURES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE [J].

ANDRE, JP ;

DUPONTNIVET, E ;

MORONI, D ;

PATILLON, JN ;

ERMAN, M ;

NGO, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :354-359

[2] STATE OF LOCAL ORDER IN QUENCHED CUPT [J].

CHEVALIER, JP ;

STOBBS, WM .

ACTA METALLURGICA, 1979, 27 (03) :285-299

[3] LONG-RANGE ORDER IN ALXGA1-XAS [J].

COHEN, JS ;

SCHLIJPER, AG .

PHYSICAL REVIEW B, 1987, 36 (03) :1526-1530

[4] STRAIN-ASSISTED EPITAXIAL-GROWTH OF NEW ORDERED COMPOUNDS [J].

FLYNN, CP .

PHYSICAL REVIEW LETTERS, 1986, 57 (05) :599-602

[5]

GLAS F, 1985, I PHYS C SER, V76, P251

[6] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[7] LONG-RANGE ORDER IN ALXGA1-XAS [J].

KUAN, TS ;

KUECH, TF ;

WANG, WI ;

WILKIE, EL .

PHYSICAL REVIEW LETTERS, 1985, 54 (03) :201-204

[8] STRESS EFFECTS ON III-V SOLID-LIQUID EQUILIBRIA [J].

LARCHE, FC ;

CAHN, JW .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1232-1239

[9] 1ST-PRINCIPLES CALCULATION OF SEMICONDUCTOR-ALLOY PHASE-DIAGRAMS [J].

MBAYE, AA ;

FERREIRA, LG ;

ZUNGER, A .

PHYSICAL REVIEW LETTERS, 1987, 58 (01) :49-52

[10]

MUGATROYD IJ, 1986, 11TH P INT C EL MICR, P1497

← 1 2 →