GAINP-ALGAINP-GAAS HETEROSTRUCTURES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE

被引：20

作者：

ANDRE, JP

DUPONTNIVET, E

MORONI, D

PATILLON, JN

ERMAN, M

NGO, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90323-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：354 / 359

页数：6

共 13 条

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[3] TWO-DIMENSIONAL ELECTRON-GAS AT INTERFACE OF A SELECTIVELY DOPED INGAP/GAAS HETEROSTRUCTURE [J].

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[4] SPECTROSCOPIC ELLIPSOMETRY STUDY OF INP, GALNAS, AND GALNAS/INP HETEROSTRUCTURES [J].

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[5] MOCVD GROWTH OF (ALXGA1-X)YIN1-YP AND DOUBLE HETEROSTRUCTURES FOR VISIBLE-LIGHT LASERS [J].

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[6] DOPING STUDIES OF GA0.5IN0.5P ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

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YUAN, JS ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :395-398

[7] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

IKEDA, M ;

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APPLIED PHYSICS LETTERS, 1985, 47 (10) :1027-1028

[8] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208

[9]

KABAYASHI K, 1985, ELECTRON LETT, V21, P931

[10]

KABAYASHI K, 1985, ELECTRON LETT, V21, P1162

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