ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：113

作者：

IKEDA, M

MORI, Y

SATO, H

KANEKO, K

WATANABE, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 10期

关键词：

D O I：

10.1063/1.96366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1027 / 1028

页数：2

相关论文

共 4 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES
ASAHI, H
KAWAMURA, Y
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964
[2] CW OPERATION OF AN ALGALNP DOUBLE HETEROSTRUCTURE LASER DIODE AT 77-K GROWN BY ATMOSPHERIC METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
MORI, Y
TAKIGUCHI, M
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 661 - 663
[3] ROOM-TEMPERATURE CW OPERATION OF VISIBLE INGAASP DOUBLE HETEROSTRUCTURE LASER AT 671 NM GROWN BY HYDRIDE VPE
USUI, A
MATSUMOTO, T
INAI, M
MITO, I
KOBAYASHI, K
WATANABE, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (03): : L163 - L165
[4] LOW THRESHOLD CURRENT OPERATION OF VAPOR-GROWN 650-NM-BAND INGAASP INGAP DH LASERS
USUI, A
MATSUMOTO, T
INAI, M
MITO, I
KOBAYASHI, K
WATANABE, H
[J]. ELECTRONICS LETTERS, 1985, 21 (02) : 54 - 56