DOPING STUDIES OF GA0.5IN0.5P ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：24

作者：

HSU, CC ^{[1
]}

YUAN, JS ^{[1
]}

COHEN, RM ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

机构：

[1] UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 02期

关键词：

CRYSTALS - Epitaxial Growth - ORGANOMETALLICS - Decomposition - PHOTOLUMINESCENCE - Measurements - SEMICONDUCTING FILMS - Chemical Vapor Deposition;

D O I：

10.1063/1.336642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Undoped Ga//0//. //5In//0//. //5P has been successfully grown by organometallic vapor-phase epitaxy on GaAs substrates with a free-electron concentration of 10**1**6 cm** minus **3 and a mobility of 1050 cm**2/Vs in nominally undoped material. The distribution coefficient of indium in the growth of Ga//0//. //5In//0//. //5P is near to unity. Both n- and p-type carrier concentrations of up to 10**1**9 cm** minus **3 have been obtained in the present study. Diethyltelluride and silane are used as n-type dopants. Dimethylzinc is used as the p-type dopant. Te is a very efficient dopant with a distribution coefficient k//T//e equals 54. The photoluminescence intensity increases with Te doping level to a maximum at n equals 2 multiplied by 10**1**8 cm** minus **3.

引用

页码：395 / 398

页数：4

共 27 条

[1]

ARCHER RJ, 1972, J ELECT MAT, V1, P1

[2] METAL ORGANIC VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE [J].