ALGAINP VISIBLE SEMICONDUCTOR-LASERS

被引：7

作者：

IKEDA, M

NAKANO, K

TODA, A

MORI, Y

KOJIMA, C

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷

关键词：

D O I：

10.7567/JJAPS.26S4.101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：101 / 105

页数：5

共 11 条

[1] AGING CHARACTERISTICS OF ALGAINP/GAINP VISIBLE-LIGHT LASERS (LAMBDA-L = 678 NM) [J].

GOMYO, A ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

SUZUKI, T .

ELECTRONICS LETTERS, 1987, 23 (02) :85-85

[2] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF A GAINP/ALGAINP MULTIQUANTUM WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

IKEDA, M ;

TODA, A ;

NAKANO, K ;

MORI, Y ;

WATANABE, N .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1033-1034

[3] MOCVD GROWTH OF ALGAINP AT ATMOSPHERIC-PRESSURE USING TRIETHYLMETALS AND PHOSPHINE [J].

IKEDA, M ;

NAKANO, K ;

MORI, Y ;

KANEKO, K ;

WATANABE, N .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :380-385

[4] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER [J].

IKEDA, M ;

NAKANO, K ;

MORI, Y ;

KANEKO, K ;

WATANABE, N .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :89-91

[5] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

IKEDA, M ;

MORI, Y ;

SATO, H ;

KANEKO, K ;

WATANABE, N .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1027-1028

[6] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIKAWA, M ;

OHBA, Y ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208

[7]

Ishikawa M, 1986, 18TH INT C SOL STAT, P153

[8] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J].

KOBAYASHI, K ;

KAWATA, S ;

GOMYO, A ;

HINO, I ;

SUZUKI, T .

ELECTRONICS LETTERS, 1985, 21 (20) :931-932

[9] NEW CLASS OF GAIN GUIDING LASER WITH A TAPERED-STRIPE STRUCTURE [J].

MAMINE, T ;

ODA, T ;

YONEYAMA, O .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4302-4304

[10] VERY LOW THRESHOLD CURRENT-DENSITY OF A GAINP/ALGAINP DOUBLE-HETEROSTRUCTURE LASER GROWN BY MOCVD [J].

NAKANO, K ;

IKEDA, M ;

TODA, A ;

KOJIMA, C .

ELECTRONICS LETTERS, 1987, 23 (17) :894-895

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