680-NM BAND GAINP/ALGAINP TAPERED STRIPE LASER

被引：27

作者：

IKEDA, M

SATO, H

OHATA, T

NAKANO, K

TODA, A

KUMAGAI, O

KOJIMA, C

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 20期

关键词：

D O I：

10.1063/1.98610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1572 / 1573

页数：2

相关论文

共 9 条

[1] AGING CHARACTERISTICS OF ALGAINP/GAINP VISIBLE-LIGHT LASERS (LAMBDA-L = 678 NM)
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[2] MOCVD GROWTH OF ALGAINP AT ATMOSPHERIC-PRESSURE USING TRIETHYLMETALS AND PHOSPHINE
IKEDA, M
NAKANO, K
MORI, Y
KANEKO, K
WATANABE, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 380 - 385
[3] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER
IKEDA, M
NAKANO, K
MORI, Y
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 89 - 91
[4] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
MORI, Y
SATO, H
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1027 - 1028
[5] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ISHIKAWA, M
OHBA, Y
SUGAWARA, H
YAMAMOTO, M
NAKANISI, T
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 207 - 208
[6] Ishikawa M, 1986, 18TH INT C SOL STAT, P153
[7] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS
KOBAYASHI, K
KAWATA, S
GOMYO, A
HINO, I
SUZUKI, T
[J]. ELECTRONICS LETTERS, 1985, 21 (20) : 931 - 932
[8] NEW CLASS OF GAIN GUIDING LASER WITH A TAPERED-STRIPE STRUCTURE
MAMINE, T
ODA, T
YONEYAMA, O
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4302 - 4304
[9] VERY LOW THRESHOLD CURRENT-DENSITY OF A GAINP/ALGAINP DOUBLE-HETEROSTRUCTURE LASER GROWN BY MOCVD
NAKANO, K
IKEDA, M
TODA, A
KOJIMA, C
[J]. ELECTRONICS LETTERS, 1987, 23 (17) : 894 - 895