OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS

被引:494
作者
GOMYO, A [1 ]
SUZUKI, T [1 ]
IIJIMA, S [1 ]
机构
[1] NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
关键词
D O I
10.1103/PhysRevLett.60.2645
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2645 / 2648
页数:4
相关论文
共 14 条
  • [1] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES
    ASAI, H
    OE, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6849 - 6851
  • [2] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
    GOMYO, A
    KOBAYASHI, K
    KAWATA, S
    HINO, I
    SUZUKI, T
    YUASA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
  • [3] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
    GOMYO, A
    SUZUKI, T
    KOBAYASHI, K
    KAWATA, S
    HINO, I
    YUASA, T
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
  • [4] ORDERING IN GAAS1-XSBX GROWN BY MOLECULAR-BEAM EPITAXY
    IHM, YE
    OTSUKA, N
    KLEM, J
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 2013 - 2015
  • [5] ORDERED STRUCTURES IN GAAS0.5SB0.5 ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    JEN, HR
    CHERNG, MJ
    STRINGFELLOW, GB
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1603 - 1605
  • [6] LONG-RANGE ORDER IN ALXGA1-XAS
    KUAN, TS
    KUECH, TF
    WANG, WI
    WILKIE, EL
    [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (03) : 201 - 204
  • [7] LONG-RANGE ORDER IN XGA1-XAS
    KUAN, TS
    WANG, WI
    WILKIE, EL
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 51 - 53
  • [8] 1ST-PRINCIPLES CALCULATION OF SEMICONDUCTOR-ALLOY PHASE-DIAGRAMS
    MBAYE, AA
    FERREIRA, LG
    ZUNGER, A
    [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (01) : 49 - 52
  • [9] Nakayama H., 1986, I PHYS C SER, V79, P289
  • [10] OBA Y, 1986, J CRYST GROWTH, V77, P374