LONG-RANGE ORDER IN XGA1-XAS

被引：141

作者：

KUAN, TS

WANG, WI

WILKIE, EL

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.98884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：51 / 53

页数：3

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[3] KUAN TS, 1986, 44TH P ANN M EL MICR, P398
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[5] ALLOY CLUSTERING IN GA1-XALXAS COMPOUND SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY
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[7] GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION
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[8] WARREN BE, 1969, XRAY DIFFRACTION, P208
[9] ORDER-DISORDER TRANSFORMATION IN TERNARY TETRAHEDRAL SEMICONDUCTORS
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (03) : 164 - 166