ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF SHORT-WAVELENGTH GAINP/AIGAINP LASER GROWN ON (511)A GAAS SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY

被引：8

作者：

MINAGAWA, S

TANAKA, T

KONDOW, M

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 14期

关键词：

D O I：

10.1049/el:19890620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：925 / 926

页数：2

相关论文

共 5 条

[1] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
KOBAYASHI, K
KAWATA, S
HINO, I
SUZUKI, T
YUASA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
[2] GAINP/ALGAINP DOUBLE-HETEROSTRUCTURE LASER GROWN ON A (111)B-ORIENTED GAAS SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
MORITA, E
TODA, A
YAMAMOTO, T
KANEKO, K
[J]. ELECTRONICS LETTERS, 1988, 24 (17) : 1094 - 1095
[3] CRYSTALLINE AND ELECTRONIC-ENERGY STRUCTURE OF OMVPE-GROWN ALGAINP/GAAS
KONDOW, M
KAKIBAYASHI, H
MINAGAWA, S
INOUE, Y
NISHINO, T
HAMAKAWA, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 412 - 417
[4] ZINC-DOPING OF (511)A LAYERS OF (AL0.6GA0.4)0.5IN0.5P GROWN BY ATMOSPHERIC METALORGANIC VAPOR-PHASE EPITAXY
MINAGAWA, S
KONDOW, M
[J]. ELECTRONICS LETTERS, 1989, 25 (06) : 413 - 414
[5] DEPENDENCE OF PHOTOLUMINESCENCE PEAK ENERGY OF MOVPE-GROWN ALGAINP ON SUBSTRATE ORIENTATION
MINAGAWA, S
KONDOW, M
[J]. ELECTRONICS LETTERS, 1989, 25 (12) : 758 - 759