ZINC-DOPING OF (511)A LAYERS OF (AL0.6GA0.4)0.5IN0.5P GROWN BY ATMOSPHERIC METALORGANIC VAPOR-PHASE EPITAXY

被引：21

作者：

MINAGAWA, S

KONDOW, M

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1049/el:19890284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：413 / 414

页数：2

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[6] A STUDY OF P-TYPE DOPING FOR ALGAINP GROWN BY LOW-PRESSURE MOCVD
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[7] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS
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