ZN DOPING CHARACTERISTICS FOR INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：50

作者：

NISHIKAWA, Y ^{[1
]}

TSUBURAI, Y ^{[1
]}

NOZAKI, C ^{[1
]}

OHBA, Y ^{[1
]}

KOKUBUN, Y ^{[1
]}

KINOSHITA, H ^{[1
]}

机构：

[1] TOSHIBA CORP,DIV SEMICOND,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 22期

关键词：

D O I：

10.1063/1.100276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2182 / 2184

页数：3

相关论文

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