ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF A 640NM ALGAINP VISIBLE-LIGHT SEMICONDUCTOR-LASER

被引:30
作者
KAWATA, S
FUJII, H
KOBAYASHI, K
GOMYO, A
HINO, I
SUZUKI, T
机构
[1] NEC Corp, Kawasaki, Jpn, NEC Corp, Kawasaki, Jpn
关键词
SEMICONDUCTING ALUMINUM COMPOUNDS - SEMICONDUCTOR DIODES;
D O I
10.1049/el:19870918
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Continuous-wave 640 nm operation at room temperature (20 degree C) has been achieved by a transverse-mode stabilized AlGaInP laser diode with an (Al//0//. //1//5Ga//0//. //8//5)//0//. //5In//0//. //5P quaternary active layer. The lasing wavelength is claimed to be the shortest ever reported for room-temperature cw operation of semiconductor lasers. The laser structure was grown by metalorganic vapor-phase epitaxy. The threshold current (density) was 63 ma (4. 2 ka/cm**2).
引用
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页码:1327 / 1328
页数:2
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