621-NM CW OPERATION (O-DEGREE-C) OF ALGAINP VISIBLE SEMICONDUCTOR-LASERS

被引：15

作者：

KAWATA, S

KOBAYASHI, K

GOMYO, A

HINO, I

SUZUKI, T

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 23期

关键词：

D O I：

10.1049/el:19860866

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1265 / 1266

页数：2

相关论文

共 6 条

[1] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
KOBAYASHI, K
KAWATA, S
HINO, I
SUZUKI, T
YUASA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
[2] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER
IKEDA, M
NAKANO, K
MORI, Y
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 89 - 91
[3] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ISHIKAWA, M
OHBA, Y
SUGAWARA, H
YAMAMOTO, M
NAKANISI, T
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 207 - 208
[4] 661.7 NM ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE LASERS WITH ALUMINUM-CONTAINING QUATERNARY ACTIVE LAYER
KOBAYASHI, K
KAWATA, S
GOMYO, A
HINO, I
SUZUKI, T
[J]. ELECTRONICS LETTERS, 1985, 21 (24) : 1162 - 1163
[5] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS
KOBAYASHI, K
KAWATA, S
GOMYO, A
HINO, I
SUZUKI, T
[J]. ELECTRONICS LETTERS, 1985, 21 (20) : 931 - 932
[6] SUZUKI T, 1986, 18TH INT C SOL STAT, P149