636 NM ROOM-TEMPERATURE CW OPERATION BY HETEROBARRIER BLOCKING STRUCTURE INGAAIP LASER-DIODES

被引：25

作者：

ITAYA, K

ISHIKAWA, M

UEMATSU, Y

机构：

[1] Toshiba Research and Development Centre, Kawasaki, Saiwai-ku, 1 Komukai Toshiba-cho

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 13期

关键词：

Lasers and laser applications; Semiconductor devices and materials; Semiconductor lasers;

D O I：

10.1049/el:19900550

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

636 nm room temperature CW operation has been achieved by heterobarrier blocking structure InGaAlP laser diodes with a quaternary active layer. This structure was fabricated by two-step metal-organic chemical vapour deposition. The threshold current was 102 mA at 20°C and CW operation of 3mW was attained at up to 48°C. © 1990, The Institution of Electrical Engineers. All rights reserved.

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页码：839 / 840

页数：2

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