A NEW TRANSVERSE-MODE STABILIZED INGAALP VISIBLE-LIGHT LASER DIODE USING P-P ISOTYPE HETEROBARRIER BLOCKING

被引：20

作者：

ITAYA, K

ISHIKAWA, M

WATANABE, Y

NITTA, K

HATAKOSHI, GI

UEMATSU, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期

关键词：

D O I：

10.1143/JJAP.27.L2414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2414 / L2416

页数：3

共 8 条

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KOJIMA, C .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1572-1573

[2] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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MORI, Y ;

SATO, H ;

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WATANABE, N .

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[3]

ISHIKAW AM, 1986, T IECE JAPAN, V69, P382

[4] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIKAWA, M ;

OHBA, Y ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208

[5]

ISHIKAWA M, 1987, 19TH C SOL STAT DEV, P115

[6]

Ishikawa M, 1986, 18TH INT C SOL STAT, P153

[7] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J].

KOBAYASHI, K ;

KAWATA, S ;

GOMYO, A ;

HINO, I ;

SUZUKI, T .

ELECTRONICS LETTERS, 1985, 21 (20) :931-932

[8] INTERFACE PROPERTIES FOR GAAS/INGAALP HETEROJUNCTIONS BY THE CAPACITANCE-VOLTAGE PROFILING TECHNIQUE [J].

WATANABE, MO ;

OHBA, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :906-908

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