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CONTINUOUS-WAVE HIGH-POWER (75 MW) OPERATION OF A TRANSVERSE-MODE STABILIZED WINDOW-STRUCTURE 680 NM AIGAINP VISIBLE LASER DIODE
被引:29
作者
:
UENO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Opto-Electronics Research Laboratories, NEC Corporation, Kawasaki, 4-1-1, Miyazaki, Miyamae-ku
UENO, Y
ENDO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Opto-Electronics Research Laboratories, NEC Corporation, Kawasaki, 4-1-1, Miyazaki, Miyamae-ku
ENDO, K
FUJII, H
论文数:
0
引用数:
0
h-index:
0
机构:
Opto-Electronics Research Laboratories, NEC Corporation, Kawasaki, 4-1-1, Miyazaki, Miyamae-ku
FUJII, H
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
Opto-Electronics Research Laboratories, NEC Corporation, Kawasaki, 4-1-1, Miyazaki, Miyamae-ku
KOBAYASHI, K
HARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Opto-Electronics Research Laboratories, NEC Corporation, Kawasaki, 4-1-1, Miyazaki, Miyamae-ku
HARA, K
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Opto-Electronics Research Laboratories, NEC Corporation, Kawasaki, 4-1-1, Miyazaki, Miyamae-ku
YUASA, T
机构
:
[1]
Opto-Electronics Research Laboratories, NEC Corporation, Kawasaki, 4-1-1, Miyazaki, Miyamae-ku
来源
:
ELECTRONICS LETTERS
|
1990年
/ 26卷
/ 20期
关键词
:
Semiconductor lasers;
D O I
:
10.1049/el:19901102
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
75 mW CW output power was obtained for a transversemode stabilised window-structure 680 nm AlGalnP visible laser diode with non-absorbing mirror facets formed by disordering of GalnP natural superlattice. Stable fundamental mode operations were achieved at up to 70 mW, which is 2-3 times as high as previously reported. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:1726 / 1728
页数:3
相关论文
共 10 条
[1]
HIGH-POWER OPERATION OF A TRANSVERSE-MODE STABILIZED ALGALNP VISIBLE-LIGHT (LAMBDA-L = 683NM) SEMICONDUCTOR-LASER
FUJII, H
论文数:
0
引用数:
0
h-index:
0
FUJII, H
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
KAWATA, S
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
GOMYO, A
HINO, I
论文数:
0
引用数:
0
h-index:
0
HINO, I
HOTTA, H
论文数:
0
引用数:
0
h-index:
0
HOTTA, H
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
SUZUKI, T
[J].
ELECTRONICS LETTERS,
1987,
23
(18)
: 938
-
939
[2]
EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(11)
: 673
-
675
[3]
OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
GOMYO, A
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
SUZUKI, T
IIJIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
IIJIMA, S
[J].
PHYSICAL REVIEW LETTERS,
1988,
60
(25)
: 2645
-
2648
[4]
ISHIKAWA M, 1987, 19TH C SOL STAT DEV, P115
[5]
HIGH-POWER OPERATION OF HETEROBARRIER BLOCKING STRUCTURE INGAAIP VISIBLE-LIGHT LASER-DIODES
ITAYA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Research and Development Center, Saiwai-ku, Kawasaki 210
ITAYA, K
WATANABE, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Research and Development Center, Saiwai-ku, Kawasaki 210
WATANABE, Y
ISHIKAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Research and Development Center, Saiwai-ku, Kawasaki 210
ISHIKAWA, M
HATAKOSHI, G
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Research and Development Center, Saiwai-ku, Kawasaki 210
HATAKOSHI, G
UEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Research and Development Center, Saiwai-ku, Kawasaki 210
UEMATSU, Y
[J].
APPLIED PHYSICS LETTERS,
1990,
56
(18)
: 1718
-
1719
[6]
KOBAYASHI K, 1988, P SPIE LOS ANGELES, P84
[7]
FABRICATION OF GAALAS WINDOW-STRIPE MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS UTILIZING ZN DIFFUSION-INDUCED ALLOYING
SUZUKI, Y
论文数:
0
引用数:
0
h-index:
0
SUZUKI, Y
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
KOBAYASHI, M
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, M
OKAMOTO, H
论文数:
0
引用数:
0
h-index:
0
OKAMOTO, H
[J].
ELECTRONICS LETTERS,
1984,
20
(09)
: 383
-
384
[8]
CARRIER-INDUCED REFRACTIVE-INDEX CHANGE, MODE GAIN AND SPONTANEOUS-EMISSION FACTOR IN ALGALNP SQW-SCH LASER-DIODES
TANAKA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Tokyo 185, 1-280 Higashikoigakubo, Kokubunji
TANAKA, T
MINAGAWA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Tokyo 185, 1-280 Higashikoigakubo, Kokubunji
MINAGAWA, S
[J].
ELECTRONICS LETTERS,
1990,
26
(11)
: 766
-
767
[9]
UENO Y, 1990, JPN J APPL PHYS 2, V29
[10]
ALGAAS WINDOW STRUCTURE LASER
YONEZU, HO
论文数:
0
引用数:
0
h-index:
0
YONEZU, HO
UENO, M
论文数:
0
引用数:
0
h-index:
0
UENO, M
KAMEJIMA, T
论文数:
0
引用数:
0
h-index:
0
KAMEJIMA, T
HAYASHI, I
论文数:
0
引用数:
0
h-index:
0
HAYASHI, I
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979,
15
(08)
: 775
-
781
←
1
→
共 10 条
[1]
HIGH-POWER OPERATION OF A TRANSVERSE-MODE STABILIZED ALGALNP VISIBLE-LIGHT (LAMBDA-L = 683NM) SEMICONDUCTOR-LASER
FUJII, H
论文数:
0
引用数:
0
h-index:
0
FUJII, H
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
KAWATA, S
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
GOMYO, A
HINO, I
论文数:
0
引用数:
0
h-index:
0
HINO, I
HOTTA, H
论文数:
0
引用数:
0
h-index:
0
HOTTA, H
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
SUZUKI, T
[J].
ELECTRONICS LETTERS,
1987,
23
(18)
: 938
-
939
[2]
EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(11)
: 673
-
675
[3]
OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
GOMYO, A
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
SUZUKI, T
IIJIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
IIJIMA, S
[J].
PHYSICAL REVIEW LETTERS,
1988,
60
(25)
: 2645
-
2648
[4]
ISHIKAWA M, 1987, 19TH C SOL STAT DEV, P115
[5]
HIGH-POWER OPERATION OF HETEROBARRIER BLOCKING STRUCTURE INGAAIP VISIBLE-LIGHT LASER-DIODES
ITAYA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Research and Development Center, Saiwai-ku, Kawasaki 210
ITAYA, K
WATANABE, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Research and Development Center, Saiwai-ku, Kawasaki 210
WATANABE, Y
ISHIKAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Research and Development Center, Saiwai-ku, Kawasaki 210
ISHIKAWA, M
HATAKOSHI, G
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Research and Development Center, Saiwai-ku, Kawasaki 210
HATAKOSHI, G
UEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba Research and Development Center, Saiwai-ku, Kawasaki 210
UEMATSU, Y
[J].
APPLIED PHYSICS LETTERS,
1990,
56
(18)
: 1718
-
1719
[6]
KOBAYASHI K, 1988, P SPIE LOS ANGELES, P84
[7]
FABRICATION OF GAALAS WINDOW-STRIPE MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS UTILIZING ZN DIFFUSION-INDUCED ALLOYING
SUZUKI, Y
论文数:
0
引用数:
0
h-index:
0
SUZUKI, Y
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
KOBAYASHI, M
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, M
OKAMOTO, H
论文数:
0
引用数:
0
h-index:
0
OKAMOTO, H
[J].
ELECTRONICS LETTERS,
1984,
20
(09)
: 383
-
384
[8]
CARRIER-INDUCED REFRACTIVE-INDEX CHANGE, MODE GAIN AND SPONTANEOUS-EMISSION FACTOR IN ALGALNP SQW-SCH LASER-DIODES
TANAKA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Tokyo 185, 1-280 Higashikoigakubo, Kokubunji
TANAKA, T
MINAGAWA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Tokyo 185, 1-280 Higashikoigakubo, Kokubunji
MINAGAWA, S
[J].
ELECTRONICS LETTERS,
1990,
26
(11)
: 766
-
767
[9]
UENO Y, 1990, JPN J APPL PHYS 2, V29
[10]
ALGAAS WINDOW STRUCTURE LASER
YONEZU, HO
论文数:
0
引用数:
0
h-index:
0
YONEZU, HO
UENO, M
论文数:
0
引用数:
0
h-index:
0
UENO, M
KAMEJIMA, T
论文数:
0
引用数:
0
h-index:
0
KAMEJIMA, T
HAYASHI, I
论文数:
0
引用数:
0
h-index:
0
HAYASHI, I
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979,
15
(08)
: 775
-
781
←
1
→