HIGH-QUALITY ALXGA1-X-YINYP ALLOYS GROWN BY MOVPE ON (311)B GAAS SUBSTRATES

High quality Ga0.5In0.5P and Al0.25Ga0.25In0.5P bulk layers as well as Ga0.5In0.5P/Al0.3Ga0.2In0.5P multiple quantum well (QW) structures have been grown by LP-MOVPE on exactly (100) and (311)B oriented GaAs substrates. The low temperature photoluminescence spectra of the AlGaInP epitaxial layers grown on (311)B GaAs substrates show a significant reduction of the linewidth at half maximum and a peak energy increase by 100-150 meV due to disordered arrangement on the group III sublattice. QWs are characterized by high resolution TEM and photoluminescence excitation measurements. For the first time, well defined electron-heavy-hole and electron-light-hole transitions have been demonstrated. The observed transitions can be fitted within 3 meV for all wells by means of the k.p theory resulting in accurate determination of the confinement levels as a function of layer thickness. CW operation of a GaInP/AlGaInP double-heterostructure laser grown on (311)B GaAs is reported with an emission wavelength at room temperature of 651 nm which is 24 nm shorter than the 675 nm wavelength of a similar laser grown on (100) GaAs without any change in the threshold current density.