ORGANOMETALLIC VAPOR-PHASE EPITAXY OF HIGH-QUALITY GA0.51IN0.49P AT HIGH GROWTH-RATES

被引：33

作者：

CAO, DS ^{[1
]}

KIMBALL, AW ^{[1
]}

CHEN, GS ^{[1
]}

FRY, KL ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

机构：

[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5384 / 5387

页数：4

共 27 条

[1] GAINP-ALGAINP-GAAS HETEROSTRUCTURES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE
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[2] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES
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[3] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF (ALXGA1-X)0.5IN0.5P AND ITS HETEROSTRUCTURES
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) : 1856 - 1863
[4] STRAINED-LAYER SUPERLATTICES FOR REDUCTION OF DISLOCATION DENSITY IN GAAS1-XPX ON GAAS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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STRINGFELLOW, GB
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2451 - 2456
[5] CAO DS, IN PRESS J APPL PHYS
[6] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
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YUASA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
[7] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
SUZUKI, T
KOBAYASHI, K
KAWATA, S
HINO, I
YUASA, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
[8] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
GOMYO, A
SUZUKI, T
IIJIMA, S
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (25) : 2645 - 2648
[9] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP
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LEE, MH
CAMPBELL, JC
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 154 - 165
[10] OMVPE GROWTH OF GAINP
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COHEN, RM
STRINGFELLOW, GB
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 648 - 650

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