ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF (ALXGA1-X)0.5IN0.5P AND ITS HETEROSTRUCTURES

Low pressure organometallic vapor-phase epitaxial growth of Ga0 .5In0.5P and (AlxGa1-x)0.5P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electrorefluctance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidh but cracked surfaces due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three mode structure, with spectral peaks due to GaP-like, InP-like, and AIP-like LO phonons. Heterostructures are investigated including quantum shifts from a series of superlattices. These materials are incorporated in double-heterostructure lasers and single-quantum-well laser with graded-index separate confinement heterostructure.