STRAINED-LAYER SUPERLATTICES FOR REDUCTION OF DISLOCATION DENSITY IN GAAS1-XPX ON GAAS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：18

作者：

CAO, DS

CHEN, CH

FRY, KL

REIHLEN, EH

STRINGFELLOW, GB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.343415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2451 / 2456

页数：6

相关论文

共 19 条

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
WEISBERG, LR
BUIOCCHI, CJ
BLANC, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &
[2] DEFECT REDUCTION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING DIFFERENT SUPERLATTICE STRUCTURES
BEDAIR, SM
HUMPHREYS, TP
ELMASRY, NA
LO, Y
HAMAGUCHI, N
LAMP, CD
TUTTLE, AA
DREIFUS, DL
RUSSELL, P
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (15) : 942 - 944
[3] BIEFIELD RM, IN PRESS J CRYST GRO
[4] ELMASRY N, 1987, APPL PHYS LETT, V51, P608
[5] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100)
FISCHER, R
NEUMAN, D
ZABEL, H
MORKOC, H
CHOI, C
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1223 - 1225
[6] DISLOCATION FILTERING IN SEMICONDUCTOR SUPERLATTICES WITH LATTICE-MATCHED AND LATTICE-MISMATCHED LAYER MATERIALS
GOURLEY, PL
DRUMMOND, TJ
DOYLE, BL
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1101 - 1103
[7] CATHODOLUMINESCENCE OF COMPOSITIONALLY GRADED LAYERS OF GAAS1-X PX
KASANO, H
HOSOKI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 394 - 401
[8] USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS
MATTHEWS, JW
BLAKESLEE, AE
MADER, S
[J]. THIN SOLID FILMS, 1976, 33 (02) : 253 - 266
[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[10] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) : 273 - 280