DENSITY OF STATES OF INHOMOGENEOUS HYDROGENATED AMORPHOUS-SILICON

被引：2

作者：

GASPARI, F ^{[1
]}

ZUKOTYNSKI, S ^{[1
]}

PERZ, JM ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A7,ONTARIO,CANADA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 143卷 / 2-3期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/S0022-3093(05)80572-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated amorphous silicon samples with a varying degree of inhomogeneity of hydrogen concentration have been prepared using saddle field glow discharge. The densities of states of both homogeneous and inhomogeneous samples have been investigated using deep level transient spectroscopy. The homogeneous samples exhibited the familiar D- center peak at approximately midgap, while the inhomogeneous samples showed an additional peak at 0.6 eV below the conduction band. This second peak has been identified with a D+ center and the presence of this center has been correlated with both the hydrogen content and the presence of inhomogeneities.

引用

页码：241 / 245

页数：5

共 7 条

[1]

BARYAM Y, 1990, PHYSICS APPLICATIONS, P2

[2] DENSITY-OF-STATES DISTRIBUTION IN THE MOBILITY GAP OF A-SI-H [J].