SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT

被引：81

作者：

BEST, JS

机构：

[1] California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 08期

关键词：

D O I：

10.1063/1.90850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Schottky-barrier height of Au on chemically etched n-Ga 1-xAlxAs was measured as a function of x. As x increases, the barrier height rises to a value of about 1.2 eV at x≈0.45, then decreases to about 1.0 eV as x approaches 0.83. The barrier height deviates in a linear way from the value predicted by the common-anion" rule as the AlAs mole fraction increases. This behavior is related to chemical reactivity of the Ga1-xAlxAs surface."

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页码：522 / 527

页数：6

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