NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS

被引：130

作者：

LINDAU, I ^{[1
]}

CHYE, PW ^{[1
]}

GARNER, CM ^{[1
]}

PIANETTA, P ^{[1
]}

SU, CY ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1332 / 1339

页数：8

相关论文

共 103 条

[1] EFFECTS OF THERMAL EXCITATION AND QUANTUM-MECHANICAL TRANSMISSION ON PHOTO-THRESHOLD DETERMINATION OF SCHOTTKY-BARRIER HEIGHT
ANDERSON, CL
CROWELL, CR
KAO, TW
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 705 - 713
[2] Andrews J. M., 1975, Critical Reviews in Solid State Sciences, V5, P405, DOI 10.1080/10408437508243502
[3] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
ANDREWS, JM
PHILLIPS, JC
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
[4] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
LEPSELTER, MP
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 1011 - +
[5] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE
ANDREWS, JM
KOCH, FB
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 901 - &
[6] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY
ANDREWS, JM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 972 - 984
[7] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1340 - 1343
[8] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[9] DIELECTRIC CONTINUUM THEORY OF ELECTRONIC-STRUCTURE OF INTERFACES
BARRERA, RG
DUKE, CB
[J]. PHYSICAL REVIEW B, 1976, 13 (10): : 4477 - 4489
[10] BENENZ JJ, 1976, J VAC SCI TECHNOL, V13, P1152

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