ANISOTROPY OF DIFFERENTIAL CONDUCTIVITY AND OF TRANSVERSE DIFFUSION-COEFFICIENT IN N-TYPE SILICON

被引：3

作者：

GASQUET, D

NOUGIER, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 01期

关键词：

D O I：

10.1063/1.90157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：89 / 91

页数：3

共 12 条

[1]

CANALI C, 1976, 13TH P INT C PHYS SE, P1231

[2] EXPERIMENTAL DETERMINATION OF HIGHLY CONCENTRATION-SENSITIVE EFFECTS OF INTERVALLEY ELECTRON-ELECTRON SCATTERING ON ELECTRIC-FIELD-DEPENDENT REPOPULATION IN N-SI AT 77K [J].

NASH, JG ;

HOLMKENN.JW .

APPLIED PHYSICS LETTERS, 1974, 24 (03) :139-141

[3]

NASH JG, 1976, PHYS REV B, V16, P2834

[4] DIFFERENTIAL RELAXATION-TIMES AND DIFFUSIVITIES OF HOT CARRIERS IN ISOTROPIC SEMICONDUCTORS [J].

NOUGIER, JP ;

ROLLAND, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1683-1687

[5] MOBILITY, NOISE TEMPERATURE, AND DIFFUSIVITY OF HOT HOLES IN GERMANIUM [J].

NOUGIER, JP ;

ROLLAND, M .

PHYSICAL REVIEW B, 1973, 8 (12) :5728-5737

[6] NOISE TEMPERATURE AND SPECTRAL DENSITY OF HOT CARRIER VELOCITY FLUCTUATIONS IN SEMICONDUCTORS [J].

NOUGIER, JP .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 55 (01) :K43-K46

[7] HOT-ELECTRON INTERVALLEY TRANSFER IN SILICON [J].

NOUGIER, JP ;

ROLLAND, M ;

GASQUET, D .

PHYSICAL REVIEW B, 1975, 11 (04) :1497-1502

[8] ANISOTROPY IN DIFFUSION-NOISE TEMPERATURE AND DIFFERENTIAL MOBILITY INDUCED IN SEMICONDUCTORS BY AN EXTERNAL ELECTRIC-FIELD [J].

NOUGIER, JP .

PHYSICA, 1973, 64 (01) :209-213

[9]

NOUGIER JP, 1976, INT M HIGH FIELD NOI

[10]

Price P., 1965, FLUCTUATION PHENOMEN

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