HOT-ELECTRON INTERVALLEY TRANSFER IN SILICON

被引：10

作者：

NOUGIER, JP ^{[1
]}

ROLLAND, M ^{[1
]}

GASQUET, D ^{[1
]}

机构：

[1] UNIV SCI & TECH LANGUEDOC,CNRS,CTR ETUD ELECTR SOLIDES,34060 MONTPEPELLIER,FRANCE

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.11.1497

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1497 / 1502

页数：6

共 19 条

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[6]

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[8] CONDUCTIVITY ANISOTROPY + HOT ELECTRON TEMPERATURE IN SILICON [J].

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[10]

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