NEGATIVE DIFFERENTIAL MOBILITY FOR ELECTRONS IN SILICON AT TEMPERATURES BELOW 77 DEGREES K

被引：9

作者：

CANALI, C ^{[1
]}

LORIA, A ^{[1
]}

NAVA, F ^{[1
]}

OTTAVIANI, G ^{[1
]}

机构：

[1] UNIV MODENA, IST FIS, MODENA, ITALY

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 12卷 / 10期

关键词：

D O I：

10.1016/0038-1098(73)90027-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1017 / 1021

页数：5

共 15 条

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[8]

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[9] MEASUREMENT OF BULK NEGATIVE DIFFERENTIAL CONDUCTIVITY IN N - TYPE SILICON [J].

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[10] DETERMINATION OF CURRENT WAVEFORM AND EFFICIENCY OF GUNN DIODES [J].

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