MEASUREMENT OF BULK NEGATIVE DIFFERENTIAL CONDUCTIVITY IN N - TYPE SILICON

被引:12
作者
GRAM, NO
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10.1016/0375-9601(72)90058-8
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O4 [物理学];
学科分类号
0702 ;
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页码:235 / &
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共 4 条
[1]  
ASCHE M, PERSONAL COMMUNICATI
[2]   MEASUREMENT OF NEGATIVE DIFFERENTIAL MOBILITY OF ELECTRONS IN GAAS [J].
GUNN, JB ;
ELLIOTT, BJ .
PHYSICS LETTERS, 1966, 22 (04) :369-+
[3]  
JORGENSEN MH, TO BE PUBLISHED
[4]   NEGATIVE RESISTANCE ARISING FROM TRANSIT TIME IN SEMICONDUCTOR DIODES [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1954, 33 (04) :799-826