DRIFT VELOCITY OF ELECTRONS AND HOLES AND ASSOCIATED ANISOTROPIC EFFECTS IN SILICON

[1] HOT-HOLE ANISOTROPY IN SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (11) : 432 - +

[2] ALBERIGIQUARANT.A, 1965, PHYS LETT, V17, P102

[3] ALBERIGIQUARANT.A, 1968, SOLID STATE ELECTRON, V11, P685

[4] CONDUCTIVITY OF HOT HOLES IN SILICON AT 77 DEGREES K [J]. PHYSICA STATUS SOLIDI, 1970, 38 (01): : 357 - &

[5] ABHANGIGKEIT DER ANISOTROPIE DER ELEKTRISCHEN LEITFAHIGKEIT DES SILIZIUMS VOM ELEKTRISCHEN FELD [J]. PHYSICA STATUS SOLIDI, 1965, 9 (02): : 323 - &

[6] BOICHENK.BL, 1966, FIZ TVERD TELA+, V7, P1631

[7] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[8] SATURATION VALUES OF ELECTRON DRIFT VELOCITY IN SILICON BETWEEN 300 DEGREES K AND 4.2 DEGREES K [J]. PHYSICS LETTERS A, 1970, A 32 (03) : 147 - +

[9] ON THE INDUCED CHARGE IN SEMICONDUCTOR DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1963, 21 (01): : 177 - 178

[10] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390

[1] HOT-HOLE ANISOTROPY IN SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (11) : 432 - +

[2] ALBERIGIQUARANT.A, 1965, PHYS LETT, V17, P102

[3] ALBERIGIQUARANT.A, 1968, SOLID STATE ELECTRON, V11, P685

[4] CONDUCTIVITY OF HOT HOLES IN SILICON AT 77 DEGREES K [J]. PHYSICA STATUS SOLIDI, 1970, 38 (01): : 357 - &

[5] ABHANGIGKEIT DER ANISOTROPIE DER ELEKTRISCHEN LEITFAHIGKEIT DES SILIZIUMS VOM ELEKTRISCHEN FELD [J]. PHYSICA STATUS SOLIDI, 1965, 9 (02): : 323 - &

[6] BOICHENK.BL, 1966, FIZ TVERD TELA+, V7, P1631

[7] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[8] SATURATION VALUES OF ELECTRON DRIFT VELOCITY IN SILICON BETWEEN 300 DEGREES K AND 4.2 DEGREES K [J]. PHYSICS LETTERS A, 1970, A 32 (03) : 147 - +

[9] ON THE INDUCED CHARGE IN SEMICONDUCTOR DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1963, 21 (01): : 177 - 178

[10] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390