SATURATION VALUES OF ELECTRON DRIFT VELOCITY IN SILICON BETWEEN 300 DEGREES K AND 4.2 DEGREES K

被引：9

作者：

CANALI, C

OTTAVIANI, G

机构：

来源：

PHYSICS LETTERS A | 1970年 / A 32卷 / 03期

关键词：

D O I：

10.1016/0375-9601(70)90244-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：147 / +

页数：1

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