OPTICAL PHONON-ASSISTED TRANSITIONS IN DEEP ACCEPTOR IMPURITIES IN SILICON

被引：5

作者：

BHATIA, KL

机构：

来源：

关键词：

D O I：

10.1139/p71-044

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：374 / &

共 18 条

BEBB, HB ;

CHAPMAN, RA .

[2]

BEBB HB, 1969, 3 INT C PHOT COND ST

[3] INFRARED ABSORPTION LINES IN BORON-DOPED SILICON [J].

COLBOW, K .

FANO, U .

PHYSICAL REVIEW, 1961, 124 (06) :1866-&

HARDY, JR .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (512) :1154-&

[6]

HARDY JR, 1962, INT C PHYSICS SEMICO, P521

HOPFIELD, JJ ;

DEAN, PJ ;

THOMAS, DG .

PHYSICAL REVIEW, 1967, 158 (03) :748-&

[8] A THEORY OF EDGE-EMISSION PHENOMENA IN CDS, ZNS AND ZNO [J].

HOPFIELD, JJ .

[9]

JOHNSON FA, 1965, PROGRESS SEMICONDUCT, V9, P181

[10] PHONON BROADENING OF IMPURITY LINES [J].

KANE, EO .

PHYSICAL REVIEW, 1960, 119 (01) :40-42