INFRARED ABSORPTION LINES IN BORON-DOPED SILICON

[1] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[2] PHONON BROADENING OF IMPURITY SPECTRAL LINES .2. APPLICATION TO SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1963, 41 (11) : 1823 - &

[3] OPTICAL INVESTIGATIONS OF IMPURITY LEVELS IN SILICON [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 849 - 852

[4] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 65 - 74

[5] TEMPERATURE DEPENDENCE OF ABSORPTION LINE WIDTH IN BORON-DOPED SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1962, 40 (10) : 1436 - &

[6] COLBOW K, 1963, THESIS U BRITISH COL

[7] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[8] Debye P, 1923, PHYS Z, V24, P185

[9] DAS MIKROFELD IN GESAMTHEITEN MIT COULOMBSCHER WECHSELWIRKUNG [J]. ZEITSCHRIFT FUR PHYSIK, 1957, 148 (05): : 593 - 606

[10] INFRARED SPECTRA OF GROUP-III ACCEPTORS IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (1-2) : 148 - 153

[1] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[2] PHONON BROADENING OF IMPURITY SPECTRAL LINES .2. APPLICATION TO SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1963, 41 (11) : 1823 - &

[3] OPTICAL INVESTIGATIONS OF IMPURITY LEVELS IN SILICON [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 849 - 852

[4] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 65 - 74

[5] TEMPERATURE DEPENDENCE OF ABSORPTION LINE WIDTH IN BORON-DOPED SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1962, 40 (10) : 1436 - &

[6] COLBOW K, 1963, THESIS U BRITISH COL

[7] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[8] Debye P, 1923, PHYS Z, V24, P185

[9] DAS MIKROFELD IN GESAMTHEITEN MIT COULOMBSCHER WECHSELWIRKUNG [J]. ZEITSCHRIFT FUR PHYSIK, 1957, 148 (05): : 593 - 606

[10] INFRARED SPECTRA OF GROUP-III ACCEPTORS IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (1-2) : 148 - 153