PHONON BROADENING OF IMPURITY SPECTRAL LINES .2. APPLICATION TO SILICON

被引：47

作者：

BARRIE, R

NISHIKAWA, K

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1963年 / 41卷 / 11期

关键词：

D O I：

10.1139/p63-183

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：1823 / &

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