OXIDATION BEHAVIOR OF BORON-CARBIDE

被引:45
作者
ZEHRINGER, R [1 ]
KUNZLI, H [1 ]
OELHAFEN, P [1 ]
HOLLENSTEIN, C [1 ]
机构
[1] ECOLE POLYTECH FED LAUSANNE,ASSOC EURATOM CONFEDERAT SUISSE,CTR RECH PHYS PLASMAS,CH-1007 LAUSANNE,SWITZERLAND
关键词
D O I
10.1016/0022-3115(90)90074-W
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The oxidation behaviour of various boron-carbide samples have been studied by photoelectron spectroscopy. The exposure of sputter-cleaned surfaces to molecular oxygen at room temperature did not cause a measurable surface oxidation. An increased reactivity has been found by irradiating boron carbide with energetic oxygen ions. The highest reactivity against oxidation was obtained during the growth of a boron-carbide surface phase which revealed a marked oxygen gettering effect.
引用
收藏
页码:370 / 374
页数:5
相关论文
共 7 条
[1]  
HOLLENSTEIN C, 1990, J NUCL MATER, V176
[2]  
OELHAFEN P, 1987, AMORPHOUS HYDROGENAT, P267
[3]   AMORPHOUS HYDROGENATED CARBON-FILMS ON SEMICONDUCTORS .1. ELECTRONIC-PROPERTIES OF THE INTERFACE [J].
UGOLINI, D ;
EITLE, J ;
OELHAFEN, P ;
WITTMER, M .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (06) :549-558
[4]  
UGOLINI D, 1987, AMORPHOUS HYDROGENAT, P287
[5]   DEVELOPMENT OF PLASMA CVD AND FEASIBILITY STUDY OF BORON-CARBIDE INSITU COATINGS FOR TOKAMAKS [J].
VEPREK, S ;
RAMBERT, S ;
HEINTZE, M ;
MATTENBERGER, F ;
JURCIKRAJMAN, M ;
PORTMANN, W ;
RINGER, D ;
STIEFEL, U .
JOURNAL OF NUCLEAR MATERIALS, 1989, 162 :724-731
[6]  
Wagner C., 1979, HDB XRAY PHOTOELECTR
[7]  
WINTER J, 1990, J NUCL MATER, V176