EPITAXIAL LANIO3 THIN-FILMS - A NORMAL-METAL BARRIER FOR SNS JUNCTION

被引：12

作者：

HEGDE, MS

SATYALAKSHMI, KM

MALLYA, RM

RAJESWARI, M

ZHANG, H

机构：

[1] INDIAN INST SCI,DEPT MET,BANGALORE 560012,KARNATAKA,INDIA

[2] UNIV MARYLAND,CTR SUPERCONDUCT RES,DEPT PHYS,COLL PK,MD 20742

来源：

JOURNAL OF MATERIALS RESEARCH | 1994年 / 9卷 / 04期

关键词：

D O I：

10.1557/JMR.1994.0898

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial LaNiO3 thin films have been grown on SrTiO3 and several other substrates by pulsed laser deposition. The films are observed to be metallic down to 15 K, and the temperature dependence of resistivity is similar to that of bulk LaNiO3. Epitaxial, c-axis oriented YBa2Cu3O7-x films with good superconducting properties have been grown on the LaNiO3 (100) filMS. I-V characteristics of the YBa2Cu3O7-LaNiO3 junction are linear, indicating ohmic contact between them.

引用

收藏

页码：898 / 902

页数：5

相关论文

共 13 条

[1] SINGLE-CRYSTAL EPITAXIAL THIN-FILMS OF THE ISOTROPIC METALLIC OXIDES SR1-XCAXRUO3 (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) [J].

EOM, CB ;

CAVA, RJ ;

FLEMING, RM ;

PHILLIPS, JM ;

VANDOVER, RB ;

MARSHALL, JH ;

HSU, JWP ;

KRAJEWSKI, JJ ;

PECK, WF .

SCIENCE, 1992, 258 (5089) :1766-1769

[2]

Goodenough J. B., 1970, LANDOLT BORNSTEIN NU, V4, P126

[3] COMPLEX VS BAND FORMATION IN PEROVSKITE OXIDES [J].

GOODENOUGH, JB ;

RACCAH, PM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P2) :1031-+

[4]

KEVON C, 1993, APPL PHYS LETT, V62, P1289

[5] LOW-TEMPERATURE ELECTRONIC-PROPERTIES OF A NORMAL CONDUCTING PEROVSKITE OXIDE (LANIO3) [J].

RAJEEV, KP ;

SHIVASHANKAR, GV ;

RAYCHAUDHURI, AK .

SOLID STATE COMMUNICATIONS, 1991, 79 (07) :591-595

[6] FABRICATION OF HETEROEPITAXIAL YBA2CU3O7-X-PRBA2CU3O7-X-YBA2CU3O7-X JOSEPHSON DEVICES GROWN BY LASER DEPOSITION [J].

ROGERS, CT ;

INAM, A ;

HEGDE, MS ;

DUTTA, B ;

WU, XD ;

VENKATESAN, T .

APPLIED PHYSICS LETTERS, 1989, 55 (19) :2032-2034

[7] MAGNETIC-PROPERTIES OF LANIO3 FILMS AND JOSEPHSON CHARACTERISTICS OF Y1BA2CU3O7-Y/LANIO3/AU/AG/PB JUNCTIONS [J].

SAGOI, M ;

KINNO, T ;

YOSHIDA, J ;

MIZUSHIMA, K .

APPLIED PHYSICS LETTERS, 1993, 62 (15) :1833-1835

[8] EPITAXIAL METALLIC LANIO3 THIN-FILMS GROWN BY PULSED LASER DEPOSITION [J].

SATYALAKSHMI, KM ;

MALLYA, RM ;

RAMANATHAN, KV ;

WU, XD ;

BRAINARD, B ;

GAUTIER, DC ;

VASANTHACHARYA, NY ;

HEGDE, MS .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1233-1235

[9] ELECTRONIC-PROPERTIES OF THE METALLIC PEROVSKITE LANIO3 - CORRELATED BEHAVIOR OF 3D ELECTRONS [J].

SREEDHAR, K ;

HONIG, JM ;

DARWIN, M ;

MCELFRESH, M ;

SHAND, PM ;

XU, J ;

CROOKER, BC ;

SPALEK, J .

PHYSICAL REVIEW B, 1992, 46 (10) :6382-6386

[10] FILLING DEPENDENCE OF ELECTRONIC-PROPERTIES ON THE VERGE OF METAL MOTT-INSULATOR TRANSITIONS IN SR1-XLAXTIO3 [J].

TOKURA, Y ;

TAGUCHI, Y ;

OKADA, Y ;

FUJISHIMA, Y ;

ARIMA, T ;

KUMAGAI, K ;

IYE, Y .

PHYSICAL REVIEW LETTERS, 1993, 70 (14) :2126-2129