DETERMINATION OF RATES FOR ORIENTATION-DEPENDENT ETCHING

被引:25
作者
ZIELKE, D [1 ]
FRUHAUF, J [1 ]
机构
[1] TECH UNIV CHEMNITZ,FAK ELEKTROTECH & INFORMAT TECH,D-09107 CHEMNITZ,GERMANY
关键词
ETCH RATES; ORIENTATION-DEPENDENT ETCHING;
D O I
10.1016/0924-4247(95)00993-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For the simulation of orientation-dependent etching processes it is necessary to determine the etch rates of the etchant used. Two methods will be described for the determination of these etch rates. Special importance will be attached to the use of only familiar technological process steps and materials for the determination.
引用
收藏
页码:151 / 156
页数:6
相关论文
共 11 条
[1]   ASEP - A CAD PROGRAM FOR SILICON ANISOTROPIC ETCHING [J].
BUSER, RA ;
DEROOIJ, NF .
SENSORS AND ACTUATORS A-PHYSICAL, 1991, 28 (01) :71-78
[2]   ANISOTROPIC CRYSTAL ETCHING - A SIMULATION PROGRAM [J].
DANEL, JS ;
DELAPIERRE, G .
SENSORS AND ACTUATORS A-PHYSICAL, 1992, 31 (1-3) :267-274
[3]  
Fruhauf J., 1993, Journal of Micromechanics and Microengineering, V3, P113, DOI 10.1088/0960-1317/3/3/004
[4]   KOH ETCHING OF HIGH-INDEX CRYSTAL PLANES IN SILICON [J].
HERR, E ;
BALTES, H .
SENSORS AND ACTUATORS A-PHYSICAL, 1992, 31 (1-3) :283-287
[6]  
Kleber W, 1990, EINFUHRUNG KRISTALLO
[7]  
Koide A., 1991, Proceedings. IEEE Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots (Cat. No.91CH2957-9), P216, DOI 10.1109/MEMSYS.1991.114799
[8]  
SEIDEL H, 1990, J ELECTROCHEM SOC, V11, P3612
[9]   COMPUTER-SIMULATION OF ANISOTROPIC CRYSTAL ETCHING [J].
SEQUIN, CH .
SENSORS AND ACTUATORS A-PHYSICAL, 1992, 34 (03) :225-241
[10]   MORPHOLOGY ANALYSIS IN LOCALIZED CRYSTAL-GROWTH AND DISSOLUTION [J].
SHAW, DW .
JOURNAL OF CRYSTAL GROWTH, 1979, 47 (04) :509-517