SURFACE ELECTRONIC-STRUCTURE OF SI(111)7X7-GE AND SI(111)5X5-GE STUDIED WITH PHOTOEMISSION AND INVERSE PHOTOEMISSION

被引：89

作者：

MARTENSSON, P ^{[1
]}

NI, WX ^{[1
]}

HANSSON, GV ^{[1
]}

NICHOLLS, JM ^{[1
]}

REIHL, B ^{[1
]}

机构：

[1] IBM CORP,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.36.5974

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5974 / 5981

页数：8

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