EFFECT OF SURFACE RECONSTRUCTION ON THE ADSORPTION OF GE ON CLEAN SI(III)

[1] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123

[2] ELECTRONIC-PROPERTIES OF THE ANNEALED INTERFACE BETWEEN AG AND 7X7 SI(111) [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (22): : 3313 - 3319

[3] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4552 - 4559

[4] NATURE OF THE SI(111)7X7 RECONSTRUCTION [J]. PHYSICAL REVIEW B, 1981, 23 (08): : 4279 - 4282

[5] ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 799 - 802

[6] STRUCTURE AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON GE ADSORPTION [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (08) : 1191 - 1193

[7] GUICHAR G, 1975, VIDE COUCHES MINCE A, V30, P97

[8] A NEW STRUCTURE MODEL FOR THE SI(111) 7X7 SURFACE-STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L61 - L64

[9] SURFACE RECONSTRUCTION AND INTERFACE FORMATION IN SI AND GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 290 - 293

[10] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1403 - &

[1] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123

[2] ELECTRONIC-PROPERTIES OF THE ANNEALED INTERFACE BETWEEN AG AND 7X7 SI(111) [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (22): : 3313 - 3319

[3] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4552 - 4559

[4] NATURE OF THE SI(111)7X7 RECONSTRUCTION [J]. PHYSICAL REVIEW B, 1981, 23 (08): : 4279 - 4282

[5] ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 799 - 802

[6] STRUCTURE AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON GE ADSORPTION [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (08) : 1191 - 1193

[7] GUICHAR G, 1975, VIDE COUCHES MINCE A, V30, P97

[8] A NEW STRUCTURE MODEL FOR THE SI(111) 7X7 SURFACE-STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L61 - L64

[9] SURFACE RECONSTRUCTION AND INTERFACE FORMATION IN SI AND GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 290 - 293

[10] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1403 - &