SURFACE RECONSTRUCTION AND INTERFACE FORMATION IN SI AND GAAS

被引:15
作者
KATNANI, AD
STOFFEL, NG
EDELMAN, HS
MARGARITONDO, G
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词
D O I
10.1116/1.571051
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:290 / 293
页数:4
相关论文
共 35 条
  • [1] OPTICAL-PROPERTIES OF DANGLING-BOND STATES AT CLEAVED SILICON SURFACES
    ASSMANN, J
    MONCH, W
    [J]. SURFACE SCIENCE, 1980, 99 (01) : 34 - 44
  • [2] GE-GAAS(110) INTERFACE FORMATION
    BAUER, RS
    MCMENAMIN, JC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1444 - 1449
  • [3] THE SI(111) 7X7 TO 1X1 TRANSITION
    BENNETT, PA
    WEBB, MW
    [J]. SURFACE SCIENCE, 1981, 104 (01) : 74 - 104
  • [4] ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE
    CHADI, DJ
    BAUER, RS
    WILLIAMS, RH
    HANSSON, GV
    BACHRACH, RZ
    MIKKELSEN, JC
    HOUZAY, F
    GUICHAR, GM
    PINCHAUX, R
    PETROFF, Y
    [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 799 - 802
  • [6] OPTICAL-ABSORPTION OF SURFACE STATES AT SI(111)7X7
    CHIAROTTI, G
    CHIARADIA, P
    NANNARONE, S
    [J]. SURFACE SCIENCE, 1975, 49 (01) : 315 - 317
  • [7] CHIAROTTI G, 1971, PHYS REV B, V4, P3396
  • [8] DETERMINATION OF SURFACE-STATES ON SI(111) BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY
    CLABES, J
    HENZLER, M
    [J]. PHYSICAL REVIEW B, 1980, 21 (02): : 625 - 631
  • [9] CULBERTSON RJ, 1980, PHYS REV LETT, V45, P2073
  • [10] ATOMIC GEOMETRY OF GAAS(110)-P(1X1)-AL
    DUKE, CB
    PATON, A
    MEYER, RJ
    BRILLSON, LJ
    KAHN, A
    KANANI, D
    CARELLI, J
    YEH, JL
    MARGARITONDO, G
    KATNANI, AD
    [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (06) : 440 - 443