OPTICAL-PROPERTIES OF DANGLING-BOND STATES AT CLEAVED SILICON SURFACES

[1] SI(2X1) SURFACE - THEORY OF ITS SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1975, 12 (04): : 1410 - 1417

[2] Assmann J., 1974, Electronica y Fisica Aplicada, V17, P128

[3] Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397

[4] CLEAVED SI(111) SURFACES - GEOMETRICAL AND ANNEALING BEHAVIOR [J]. SURFACE SCIENCE, 1979, 80 (01) : 45 - 55

[5] BAUERLE F, 1972, J APPL PHYS, V43, P3917

[6] CALCULATION OF OPTICAL-ABSORPTION BETWEEN SURFACE STATES OF SILICON [J]. SURFACE SCIENCE, 1974, 43 (02) : 417 - 430

[7] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (15) : 1062 - 1065

[8] OPTICAL-PROPERTIES OF CLEAN AND SLOWLY OXIDIZED SURFACE OF SILICON [J]. SURFACE SCIENCE, 1976, 54 (03) : 547 - 552

[9] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +

[10] CHO KC, UNPUBLISHED

[1] SI(2X1) SURFACE - THEORY OF ITS SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1975, 12 (04): : 1410 - 1417

[2] Assmann J., 1974, Electronica y Fisica Aplicada, V17, P128

[3] Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397

[4] CLEAVED SI(111) SURFACES - GEOMETRICAL AND ANNEALING BEHAVIOR [J]. SURFACE SCIENCE, 1979, 80 (01) : 45 - 55

[5] BAUERLE F, 1972, J APPL PHYS, V43, P3917

[6] CALCULATION OF OPTICAL-ABSORPTION BETWEEN SURFACE STATES OF SILICON [J]. SURFACE SCIENCE, 1974, 43 (02) : 417 - 430

[7] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (15) : 1062 - 1065

[8] OPTICAL-PROPERTIES OF CLEAN AND SLOWLY OXIDIZED SURFACE OF SILICON [J]. SURFACE SCIENCE, 1976, 54 (03) : 547 - 552

[9] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +

[10] CHO KC, UNPUBLISHED