OPTICAL-PROPERTIES OF CLEAN AND SLOWLY OXIDIZED SURFACE OF SILICON

被引：14

作者：

CHIARADIA, P

NANNARONE, S

机构：

[1] UNIV STUDI ROME,IST FIS,ROME,ITALY

[2] UNIV STUDI CAMERINO,IST FIS,CAMERINO,ITALY

来源：

关键词：

D O I：

10.1016/0039-6028(76)90203-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：547 / 552

页数：6

共 5 条

[1] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI
CHIAROTTI, G
NANNARONE, S
PASTORE, R
CHIARADIA, P
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +
[2] OPTICAL-ABSORPTION OF SURFACE STATES AT SI(111)7X7
CHIAROTTI, G
CHIARADIA, P
NANNARONE, S
[J]. SURFACE SCIENCE, 1975, 49 (01) : 315 - 317
[3] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES
HENZLER, M
[J]. SURFACE SCIENCE, 1973, 36 (01) : 109 - 122
[4] EFFECT OF OXYGEN ON SURFACE STRUCTURE AND SURFACE STATES OF CLEAVED GERMANIUM(111) FACES
HENZLER, M
[J]. SURFACE SCIENCE, 1971, 24 (01) : 209 - &
[5] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1.
IBACH, H
HORN, K
DORN, R
LUTH, H
[J]. SURFACE SCIENCE, 1973, 38 (02) : 433 - 454