DETERMINATION OF SURFACE-STATES ON SI(111) BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY

被引：76

作者：

CLABES, J

HENZLER, M

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.21.625

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：625 / 631

页数：7

相关论文

共 32 条

[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES
ALLEN, FG
GOBELI, GW
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 597 - &
[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON
ALLEN, FG
GOBELI, GW
[J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &
[3] SURFACE STATES ON CLEAVED (111) SILICON SURFACES
ASPNES, DE
HANDLER, P
[J]. SURFACE SCIENCE, 1966, 4 (04) : 353 - &
[4] Assmann J., 1974, Electronica y Fisica Aplicada, V17, P128
[5] Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397
[6] BAUERLE F, 1972, J APPL PHYS, V43, P3917
[7] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI
CHIAROTTI, G
NANNARONE, S
PASTORE, R
CHIARADIA, P
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +
[8] OPTICAL-ABSORPTION OF SURFACE STATES AT SI(111)7X7
CHIAROTTI, G
CHIARADIA, P
NANNARONE, S
[J]. SURFACE SCIENCE, 1975, 49 (01) : 315 - 317
[9] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .2.
DORN, R
LUTH, H
IBACH, H
[J]. SURFACE SCIENCE, 1974, 42 (02) : 583 - 594
[10] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
EASTMAN, DE
GROBMAN, WD
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &

← 1 2 3 4 →