FINITE-ELEMENT MODELING OF SILICA WAVE-GUIDE AMPLIFIERS WITH HIGH ERBIUM CONCENTRATION

被引:40
作者
DIPASQUALE, F [1 ]
ZOBOLI, M [1 ]
FEDERIGHI, M [1 ]
MASSAREK, I [1 ]
机构
[1] UNIV LONDON UNIV COLL,DEPT ELECTR & ELECT ENGN,LONDON WC1E 7JE,ENGLAND
关键词
D O I
10.1109/3.303693
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report numerical analysis of planar and channel silica waveguide amplifiers with high erbium concentration. The numerical approach is based on the combined use of a full-vectorial finite-element method and the Runge-Kutta algorithm. It allows one to investigate real structures, accounting for both the active ions interactions by cross-relaxation and upconversion and the effects of waveguide geometry and refractive index profile. We show that, depending on input pump power and waveguide structure, ion-ion interactions affect the amplifier performance for high erbium concentrations. A three-dimensional waveguide designed for single-mode operation ensures higher pumping efficiency and lower noise characteristics than a two-dimensional one and seems to be the best candidate to overcome this drawback.
引用
收藏
页码:1277 / 1282
页数:6
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