USE OF ION-BEAM TECHNIQUES TO CHARACTERIZE THIN PLASMA GROWN GAAS AND GAALAS OXIDE-FILMS

被引：5

作者：

KAUFFMAN, RL

FELDMAN, LC

CHANG, RPH

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(78)90939-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：619 / 622

页数：4

共 9 条

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[2]

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[3] PLASMA OXIDATION OF GAAS [J].

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[4] ENERGY-LEVELS OF A = 21-44 NUCLEI .5. [J].

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[5] COMBINED USE OF HE BACKSCATTERING AND HE-INDUCED X-RAYS IN STUDY OF ANODICALLY GROWN OXIDE-FILMS ON GAAS [J].

FELDMAN, LC ;

POATE, JM ;

ERMANIS, F ;

SCHWARTZ, B .

THIN SOLID FILMS, 1973, 19 (01) :81-89

[6]

FELDMAN LC, 1976, ION BEAM SURFACE LAY, P735

[7] ANALYSIS OF PLASMA-GROWN GAAS OXIDE-FILMS [J].

KAUFFMAN, RL ;

FELDMAN, LC ;

POATE, JM ;

CHANG, RPH .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :319-321

[8]

Northcliffe L. S., 1970, NUCL DATA A, V7, P233

[9]

ZIEGLER JF, 1975, NEW USES LOW ENERGY, pCH2

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