INTERFACE STATES AND THE TRANSPORT OF 2-DIMENSIONAL INTERFACE EXCITONS IN ALGAAS/GAAS STRUCTURES

被引：14

作者：

GILLILAND, GD ^{[1
]}

WOLFORD, DJ ^{[1
]}

NORTHROP, GA ^{[1
]}

PETROVIC, MS ^{[1
]}

KUECH, TF ^{[1
]}

BRADLEY, JA ^{[1
]}

机构：

[1] IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.586166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using an unique combination of time and spatially resolved all optical photoluminescence measurement techniques, we have studied the properties of intrinsic excitons localized in quantum interface potentials in symmetric GaAs/Al0.3Ga0.7As double heterostructures. We find the transport of these interface excitons to be extremely sensitive to the time-dependent, spatially varying conduction, and valence band potentials near the heterointerface. The observed dynamics have been modeled, relying heavily on our previous kinetic results, which proved conclusively that H-band emission in our samples arises from the radiative recombination of quasi-two-dimensional excitons localized at the heterointerfaces, and find a simple electrostatic model to be in excellent quantitative agreement with experiment

引用

页码：1959 / 1964

页数：6

共 41 条

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