ELECTRON-IRRADIATION STUDIES OF P-N-JUNCTIONS IN SILICON BIPOLAR-TRANSISTORS

被引:8
作者
BROWN, LM
FATHY, D
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1981年 / 43卷 / 04期
关键词
D O I
10.1080/01418638108222169
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:715 / 732
页数:18
相关论文
共 27 条
  • [11] KELLY A, 1973, CRYSTALLOGRAPHY CRYS, P163
  • [12] KRUGER PB, 1979, COMPUT PHYS COMMUN, V18, P385, DOI 10.1016/0010-4655(79)90008-0
  • [13] DYNAMIC OBSERVATION OF FORMATION OF DEFECTS IN SILICON UNDER ELECTRON AND PROTON IRRADIATION
    MATTHEWS, MD
    ASHBY, SJ
    [J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (06): : 1313 - 1322
  • [14] NABER JA, 1972, RAD DAMAGE DEFECTS S, P26
  • [15] RUNYAN WR, 1965, SILICON SEMICONDUCTO, P104
  • [16] SALISBURY IG, 1979, PHILOS MAG A, V39, P313
  • [17] In honour of Prof. Dr. Dr. h. c. Alfred Seeger - on the occasion of his 80th birthday
    Stutzmarm, Martin
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09): : 3024 - 3026
  • [18] SEEGER A, 1977, RAD EFFECTS SEMICOND, P12
  • [19] SEVASTYANOV KN, 1971, FIZ TVERD TELA+, V12, P1756
  • [20] Smith R.A., 1978, SEMICONDUCTORS