TM3+-RELATED EMISSIONS IN III-V SEMICONDUCTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：8

作者：

PRESSEL, K ^{[1
]}

WEBER, J ^{[1
]}

HILLER, C ^{[1
]}

OTTENWALDER, D ^{[1
]}

KURNER, W ^{[1
]}

DORNEN, A ^{[1
]}

SCHOLZ, F ^{[1
]}

LOCKE, K ^{[1
]}

WIEDMANN, D ^{[1
]}

CORDEDDU, F ^{[1
]}

机构：

[1] UNIV STUTTGART,INST ANORGAN CHEM,W-7000 STUTTGART 80,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.107836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm3+-related 4f emissions at 1.2 and 1.9-mu-m are observed both in GaAs and GaInP. In GaAs, the Tm3+ 4f luminescence at 1.2-mu-m consists of a series of very sharp lines. In GaInP samples, the Tm3+-related luminescence at 1.2-mu-m is much stronger than in the GaAs samples and is still observable at room temperature.

引用

页码：560 / 562

页数：3

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