MOVPE GROWN INP-ER LAYERS USING ER(MECP)3 AND ER(IPCP)3

被引：22

作者：

WEBER, J ^{[1
]}

MOSER, M ^{[1
]}

STAPOR, A ^{[1
]}

SCHOLZ, F ^{[1
]}

BOHNERT, G ^{[1
]}

HANGLEITER, A ^{[1
]}

HAMMEL, A ^{[1
]}

WIEDMANN, D ^{[1
]}

WEIDLEIN, J ^{[1
]}

机构：

[1] UNIV STUTTGART,INST ANORGAN CHEM,W-7000 STUTTGART 80,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 104卷 / 04期

关键词：

D O I：

10.1016/0022-0248(90)90107-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For the MOVPE growth of Er-doped InP layers we have synthesized tris(methylcyclopentadienyl)erbium, (Er(MeCp)3), and tris(isopropylcyclopentadienyl)erbium, (Er(IpCp)3) and used these compounds as solid and liquid precursors, respectively. The InP:Er layers were grown to study the incorporation behavior and the optical excitation and decay mechanisms of this rare earth element in a III-V compound semiconductor host crystal. Secondary ion mass spectrometry (SIMS) revealed Er concentrations up to 2×1019 cm-3 with a homogeneous Er distribution in the layer. Samples with these high doping concentrations have a semi-insulating character, probably a sign of a deep level correlated to the Er incorporation. A strong Er3+-related signal at 1.54 μm could be detected in low temperature photoluminescence experiments for the highly doped InP:Er samples. Codoping of the InP:Er samples with S or Zn has little influence on the shape and intensity of the Er emission. © 1990.

引用

页码：815 / 819

页数：5

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