ERBIUM-DOPED GAAS LIGHT-EMITTING DIODE AT 1.54 MU-M

被引：23

作者：

ROLLAND, A

LECORRE, A

FAVENNEC, PN

GAUNEAU, M

LAMBERT, B

LECROSNIER, D

LHARIDON, H

MOUTONNET, D

ROCHAIX, C

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 15期

关键词：

D O I：

10.1049/el:19880651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：956 / 958

页数：3

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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2803 - 2806
[2] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
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[3] NONDIFFUSION AND 1.54 MU-M LUMINESCENCE OF ERBIUM IMPLANTED IN INP
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[J]. ELECTRONICS LETTERS, 1987, 23 (13) : 684 - 686
[4] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 870 - 872
[5] LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF RARE-EARTH-ION (YB, ER) DOPED INP
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) : 345 - 356
[6] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 49 - 51
[7] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1686 - 1688