NONDIFFUSION AND 1.54 MU-M LUMINESCENCE OF ERBIUM IMPLANTED IN INP

被引：15

作者：

FAVENNEC, PN

LHARIDON, H

LECORRE, A

SALVI, M

GAUNEAU, M

机构：

[1] CNET, Lannion, Fr, CNET, Lannion, Fr

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 13期

关键词：

D O I：

10.1049/el:19870488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：684 / 686

页数：3

共 8 条

[1] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[2] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M [J].

HAYDL, WH ;

MULLER, HD ;

ENNEN, H ;

KORBER, W ;

BENZ, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :870-872

[3] RARE-EARTH IONS IN LPE III-V SEMICONDUCTORS [J].

KORBER, W ;

WEBER, J ;

HANGLEITER, A ;

BENZ, KW ;

ENNEN, H ;

MULLER, HD .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :741-744

[4]

MASTEROV VF, 1983, SOV PHYS SEMICOND+, V17, P596

[5] PHOTOLUMINESCENCE OPTIMIZATION AND CHARACTERISTICS OF THE RARE-EARTH ELEMENT ERBIUM IMPLANTED IN GAAS, INP, AND GAP [J].

POMRENKE, GS ;

ENNEN, H ;

HAYDL, W .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :601-610

[6] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS [J].

SMITH, RS ;

MULLER, HD ;

ENNEN, H ;

WENNEKERS, P ;

MAIER, M .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :49-51

[7] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J].

TSANG, WT ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1686-1688

[8]

UWAI K, 1986, 13TH C P S GAAS REL

← 1 →