RARE-EARTH IONS IN LPE III-V SEMICONDUCTORS

被引：54

作者：

KORBER, W ^{[1
]}

WEBER, J ^{[1
]}

HANGLEITER, A ^{[1
]}

BENZ, KW ^{[1
]}

ENNEN, H ^{[1
]}

MULLER, HD ^{[1
]}

机构：

[1] FRAUNHOFER INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER

来源：

关键词：

D O I：

10.1016/0022-0248(86)90548-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：741 / 744

页数：4

共 10 条

[1] BAGRAEV NT, 1984, SOV PHYS SEMICOND+, V18, P49
[2] DMITRIEV AG, 1983, SOV PHYS SEMICOND+, V17, P1201
[3] Ennen H., 1985, Thirteenth International Conference on Defects in Semiconductors, P115
[4] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS
ENNEN, H
KAUFMANN, U
POMRENKE, G
SCHNEIDER, J
WINDSCHEIF, J
AXMANN, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 165 - 168
[5] HAIGH J, 1980 P NATO INP WORK, P123
[6] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M
HAYDL, WH
MULLER, HD
ENNEN, H
KORBER, W
BENZ, KW
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 870 - 872
[7] KASATKIN VA, 1985, SOV PHYS SEMICOND+, V19, P221
[8] PREPARATION AND CHARACTERIZATION OF LPE INP
KUPHAL, E
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 117 - 126
[9] MOELLER T, 1973, COMPREHENSIVE INORGA, V4, P1
[10] ZAKHARENKOV LF, 1981, SOV PHYS SEMICOND+, V15, P946